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| s chottky barrier d iode f eatures ? high s witching s peed ? lo w f orward v oltage ? guard r ing p rotected applications ? voltage c lamping ? protection c ircuits marking : l61 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r dc blocking v oltage 4 0 v i o continuous f orward c urrent 5 00 ma i fsm non - repetitive peak f orward c urrent @ t p < 10ms 2 a p d power d issipation 3 50 mw r j a thermal r esistance from junction to a mbient 2 86 /w t j junction t emperature 1 25 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r =10 0 a 4 0 v reverse c urrent i r v r = 3 5 v 100 a forward voltage v f i f = 500 ma 550 m v so t - 23 BAT720 1 date:2011/05 www.htsemi.com semiconductor jinyu
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